Soft error rate increase for new generations of SRAMs

We report on enhanced susceptibility for neutron-induced soft errors from accelerated testing of static random access memories (SRAMs), performed at Los Alamos National Laboratory. This enhancement is per bit of memory.

Saved in:
Bibliographic Details
Published inIEEE Transactions on Nuclear Science Vol. 50; no. 6; pp. 2065 - 2068
Main Authors Granlund, T., Granbom, B., Olsson, N.
Format Journal Article Conference Proceeding
LanguageEnglish
Published New York IEEE 01.12.2003
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Accelerated tests
Aerospace electronics
Aircraft
Aircraft electronics
CMOS memory integrated circuits
Error analysis
Life estimation
Manufacturing
NATURAL SCIENCES
NATURVETENSKAP
Neutron radiation effects
Neutrons
Radiation effects
Random access memory
Semiconductor device radiation effects
Semiconductor device testing
Single event upset
Soft errors
SRAM chips
Static random access memory
Testing
Online AccessGet full text

Cover

More Information
Summary:We report on enhanced susceptibility for neutron-induced soft errors from accelerated testing of static random access memories (SRAMs), performed at Los Alamos National Laboratory. This enhancement is per bit of memory.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ObjectType-Article-2
ObjectType-Feature-1
ISSN:0018-9499
1558-1578
1558-1578
DOI:10.1109/TNS.2003.821593