Thermally Induced Precipitation of Silicon Carbide in a Semiconductor Matrix-Application to Nanoparticle Fabrication

In this work the Si 1- y C y random alloy is used as a starting point for the creation of nano particles of β-SiC with the same lattice orientation as the Si lattice in which they are grown. These nano particles are between 3 and 8 nm in diameter and are randomly dispersed throughout the Si 1- y C y...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 33; no. 4S; pp. 2392 - 2394
Main Authors Powell, Adrian R., LeGoues, Francoise K., Iyer, Subramanian S., Bruce Ek, Bruce Ek
Format Journal Article
LanguageEnglish
Published 01.04.1994
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Summary:In this work the Si 1- y C y random alloy is used as a starting point for the creation of nano particles of β-SiC with the same lattice orientation as the Si lattice in which they are grown. These nano particles are between 3 and 8 nm in diameter and are randomly dispersed throughout the Si 1- y C y region, where 0.005< y <0.05. This ability to produce quantum antidots of wide bandgap material within the Si matrix should enable the exploration of mesoscopic phenomena.
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.33.2392