Vertically Stacked ReRAM Composed of a Bidirectional Selector and CB-RAM for Cross-Point Array Applications

• Published in: IEEE electron device letters Vol. 34; no. 12; pp. 1512 - 1514
• Main Authors: Woo, Jiyong, Lee, Daeseok, Cha, Euijun, Lee, Sangheon, Park, Sangsu, Hwang, Hyunsang
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.12.2013; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Cross-point array architecture; Design. Technologies. Operation analysis. Testing; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Integrated circuits; Integrated circuits by function (including memories and processors); Memory architecture; Nanoscale devices; one selector and one resistor (1S-1R); Random access memory; Resistors; selector device; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Bidirectional link; Stacking; Random access memory; one selector and one resistor (1S-1R); Network architecture; Nanostructure; Switching; Cross-point array architecture; Non volatile memory; Interconnection; Integrated circuit; Electrical conductivity transitions; Leakage current; Reliability; selector device; Current density; Resistor; Via hole
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2013.2285583

In this letter, we discuss our technique for fabricating a vertically stacked ReRAM device composed of one selector and one resistor (1S-1R). We demonstrate that the nanoscale via-hole structure and 1-kb array architecture of selector device exhibit higher current density ( ~ 10 7 A/cm 2 ) and reliability, and we introduce bipolar resistive switching element-a conductive-bridge RAM that can be stacked on top of the selector device. The resulting integrated 1S-1R device performs robust bipolar switching operations and significantly reduces the leakage current in cross-point applications.