Reactive pulsed laser deposition of thin molybdenum- and tungsten-nitride films

• Published in: Thin solid films Vol. 473; no. 1; pp. 16 - 23
• Main Authors: Bereznai, M., Tóth, Z., Caricato, A.P., Fernández, M., Luches, A., Majni, G., Mengucci, P., Nagy, P.M., Juhász, A., Nánai, L.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01.02.2005; Elsevier Science
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Gas lasers including excimer and metal-vapor lasers; Laser ablation; Lasers; Mechanical and acoustical properties of condensed matter; Mechanical properties of solids; Molybdenum nitride; Optics; Physical vapour deposition; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Tribology and hardness; Tungsten nitride; Molybdenum nitride; Laser ablation; Physical vapour deposition; Tungsten nitride; Inorganic compounds; Films; Fluence; Pulsed laser deposition; Nitrogen; Molybdenum; Pressure; Thin films; Nitrides; Laser pulse; Laser radiation; Transition elements; Wafers; Tungsten; Low pressure; Excimer lasers; Silicon
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2004.06.149

In this work reactive pulsed laser deposition of molybdenum- and tungsten-nitride thin films is investigated. Metallic targets were ablated in low-pressure (1, 10 and 100 Pa) nitrogen atmosphere by KrF excimer laser pulses (fluence ∼6.5 J/cm2). Films were deposited on silicon wafers heated to ∼25, 250 and 500 °C. The characteristics of the films strongly depend on the N2 pressure. By increasing N2 pressure, the nitrogen content increases in the films, which leads to a monotonous increase of the electrical resistivity. Deposition rate decreases at 100 Pa as indicated by Rutherford backscattering spectrometry. At this pressure, hardness of the films significantly decreases also, as shown by microhardness measurements. X-ray diffractometry shows that films crystallinity is improved by increasing the substrate temperature. In addition, atomic force microscopy (AFM) and scanning electron microscopy (SEM) were applied for visualising the film surface.