Influence of substrate orientation on the structural quality of GaAs nanowires in molecular beam epitaxy

In this study, the effect of substrate orientation on the structural quality of Au-catalyzed epitaxial GaAs nanowires grown by a molecular beam epitaxy reactor has been investigated. It was found that the substrate orientations can be used to manipulate the nanowire catalyst composition and the cata...

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Published inNanotechnology Vol. 26; no. 25; p. 255601
Main Authors Zhang, Zhi, Shi, Sui-Xing, Chen, Ping-Ping, Lu, Wei, Zou, Jin
Format Journal Article
LanguageEnglish
Published England IOP Publishing 26.06.2015
Subjects
Catalysts
Epitaxial growth
Gallium arsenide
Gallium arsenides
III-V semiconductors
Molecular beam epitaxy
Nanowires
Orientation
Reactors
structural quality
substrate orientation
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Summary:In this study, the effect of substrate orientation on the structural quality of Au-catalyzed epitaxial GaAs nanowires grown by a molecular beam epitaxy reactor has been investigated. It was found that the substrate orientations can be used to manipulate the nanowire catalyst composition and the catalyst surface energy and, therefore, to alter the structural quality of GaAs nanowires grown on different substrates. Defect-free wurtzite-structured GaAs nanowires grown on the GaAs (110) substrate have been achieved under our growth conditions.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/26/25/255601