Low-resistivity vertical current transport across AlInN/GaN interfaces

Abstract Effects of n-type doping of Al 0.82 In 0.18 N/GaN heterostructures on the conduction band (CB) profile have been investigated. Doping concentrations well above 10 19  cm −3 are required to reduce the large barriers in the CB. Experimentally, Si- and Ge donor species are compared for n-type...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 60; no. 1; pp. 10905 - 10909
Main Authors Sana, Prabha, Seneza, Cleophace, Berger, Christoph, Witte, Hartmut, Schmidt, Marc-Peter, Bläsing, Jürgen, Neugebauer, Silvio, Hoerich, Florian, Dadgar, Armin, Strittmatter, André
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.01.2021
Japanese Journal of Applied Physics
Subjects
AlInN
Conduction bands
Doping
Electrical resistivity
Gallium nitrides
Germanium
heterostructure
Heterostructures
Metalorganic chemical vapor deposition
Self compensation
Silicon
Vapor phase epitaxy
Vapor phases
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Summary:Abstract Effects of n-type doping of Al 0.82 In 0.18 N/GaN heterostructures on the conduction band (CB) profile have been investigated. Doping concentrations well above 10 19  cm −3 are required to reduce the large barriers in the CB. Experimentally, Si- and Ge donor species are compared for n-type doping during metalorganic vapor phase epitaxy. For Si doping, we find substantial interface resistivity that will strongly contribute to total device resistivity. Doping of AlInN is limited by either the onset of a self-compensation mechanism (Si) or structural degradation of the AlInN (Ge). Only by Ge doping, purely ohmic behavior of periodic AlInN/GaN layer stacks could be realized.
Bibliography:JJAP-102990.R1
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/abd1f7