Investigation of current–voltage and capacitance–voltage characteristics of Ag/perylene-monoimide/n-GaAs Schottky diode

• Published in: Current applied physics Vol. 12; no. 6; pp. 1510 - 1514
• Main Authors: Simir, N, Safak, H, Yueksel, OeF, KuA, M
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.11.2012; 한국물리학회
• Subjects: Barriers; capacitance; Capacitance-voltage characteristics; Diodes; Electrical properties; GaAs; ionization; Mathematical analysis; Metal–semiconductor contact; Organic semiconductors; Perylene; Schottky diodes; Silver; temperature; Volt-ampere characteristics; 물리학; Organic semiconductors; Metal–semiconductor contact; Perylene; GaAs
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2012.04.028

Ag/perylene-monoimide(PMI)/n-GaAs Schottky diode was fabricated and the current–voltage (I–V) characteristics at a wide temperature range between 75 and 350 K and also the capacitance–voltage (C–V) characteristics at room temperature for 1 MHz have been analyzed in detail. The measured I–V characteristics exhibit a good rectification behavior at all temperature values. By using standard analysis methods, the ideality factor and the barrier height are deduced from the experimental data and also the variations of these parameters with the temperature are analyzed. In addition, by means of the Cheung and Cheung method, the series resistance and some other electrical properties are calculated for the diode. Finally, capacitance–voltage characteristics of device have been analyzed at the room temperature. From analyzing the capacitance measurements, Schottky barrier height is determined and then compared with the value which calculated from the I–V measurements at room temperature. Also, the concentration of ionized donors, built-in potential and some other parameters of diode are found using C–V characteristics.