Anomalous Phosphorus Cracker Temperature-Dependent Photoluminescence Spectra of InGaP Grown by Solid Source Molecular Beam Epitaxy

InGaP grown by solid source molecular beam epitaxy showed lower effective band-gap energy with increasing phosphorus cracker temperature. Anomalous photoluminescence (PL) spectra also indicated that a weaker ordering effect was initiated when the cracker temperature was higher. Since the variation o...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 39; no. 8A; pp. L819 - L821
Main Authors Cheng, Yi-Cheng, Tai, Kuochou, Chou, Shu-Tsun
Format Journal Article
LanguageEnglish
Published 01.08.2000
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Summary:InGaP grown by solid source molecular beam epitaxy showed lower effective band-gap energy with increasing phosphorus cracker temperature. Anomalous photoluminescence (PL) spectra also indicated that a weaker ordering effect was initiated when the cracker temperature was higher. Since the variation of cracker temperature mainly changed the P 2 /P 4 ratio, we believe that the more chemically reactive P 2 incorporates more In into the epilayer. Therefore, InGaP grown under a more P 2 -rich condition has a higher In content which results in the lower band-gap energy instead of having an ordering effect.
Bibliography:ObjectType-Article-2
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.L819