Semiconducting properties of aluminum-doped ZnO thin films grown by spray pyrolysis technique

Highly transparent and preferential c-axis oriented nanocrystalline undoped and A1 doped zinc oxide （AZO） thin films have been deposited onto amorphous glass substrate by spray pyrolysis. The XRD studies reveal that AZO with a hexagonal （wurtzite） crystal structure having （002） preferred orientation...

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Bibliographic Details
Published inJournal of semiconductors Vol. 36; no. 3; pp. 23 - 28
Main Authors Mahadik, M. A., Hunge, Y. M., Shinde, S. S., Rajpure, K. Y., Bhosale, C. H.
Format Journal Article
LanguageEnglish
Published Chinese Institute of Electronics 01.03.2015
Subjects
Aluminum
Azo
AZO薄膜
Deposition
morphological and dielectrical properties
Semiconductors
Spray pyrolysis
structural
Thin films
Wurtzite
Zinc oxide
光学带隙
半导体特性
原子力显微镜
喷雾热分解法
氧化物掺杂
氧化锌薄膜
铝掺杂
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Summary:Highly transparent and preferential c-axis oriented nanocrystalline undoped and A1 doped zinc oxide （AZO） thin films have been deposited onto amorphous glass substrate by spray pyrolysis. The XRD studies reveal that AZO with a hexagonal （wurtzite） crystal structure having （002） preferred orientation is formed. The atomic force microscope （AFM） shows uniform surface topography. The optical band gap values of undoped and AZO thin films were changed from 3.34 to 3.35 eV. The band gap energy and photoluminescence are found to depend on the Al doping. Thermoelectric power measurement shows film having n-type in nature. Dielectric constant and loss （tan δ） were found to be frequency dependent. Interparticle interactions in the deposited films are studied by complex impendence spectroscopy.
Bibliography:11-5781/TN
aluminum; zinc oxide; structural; morphological and dielectrical properties
Highly transparent and preferential c-axis oriented nanocrystalline undoped and A1 doped zinc oxide （AZO） thin films have been deposited onto amorphous glass substrate by spray pyrolysis. The XRD studies reveal that AZO with a hexagonal （wurtzite） crystal structure having （002） preferred orientation is formed. The atomic force microscope （AFM） shows uniform surface topography. The optical band gap values of undoped and AZO thin films were changed from 3.34 to 3.35 eV. The band gap energy and photoluminescence are found to depend on the Al doping. Thermoelectric power measurement shows film having n-type in nature. Dielectric constant and loss （tan δ） were found to be frequency dependent. Interparticle interactions in the deposited films are studied by complex impendence spectroscopy.
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/36/3/033002