Localization of Upper-Valley Electrons in a Narrow-Bandgap Channel: a Possible Additional Mechanism of Current Increase in DA–DpHEMT

The influence of the localization of upper-valley electrons in a narrow-bandgap channel on the drift velocity burst in Al x Ga 1 – x As–GaAs transistor heterostructures with double-sided doping has been theoretically estimated. It is established that the fraction of electrons passing in this case fr...

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Bibliographic Details
Published inTechnical physics letters Vol. 45; no. 10; pp. 1020 - 1023
Main Authors Pashkovskii, A. B., Bogdanov, S. A.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.10.2019
Springer Nature B.V
Subjects
ALUMINIUM ARSENIDES
Classical and Continuum Physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL DOPING
CURRENTS
Doping
ELECTRON DRIFT
Electron drift velocity
ELECTRONS
Energy gap
GALLIUM ARSENIDES
Heterostructures
Localization
Physics
Physics and Astronomy
Semiconductor devices
TRANSISTORS
donor–acceptor doping
narrow-bandgap channel
upper valleys
drift velocity burst
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Summary:The influence of the localization of upper-valley electrons in a narrow-bandgap channel on the drift velocity burst in Al x Ga 1 – x As–GaAs transistor heterostructures with double-sided doping has been theoretically estimated. It is established that the fraction of electrons passing in this case from the narrow-bandgap channel to wide-bandgap material is smaller than in the usual structures, which can lead in some cases to an increase in the electron drift velocity by up to 15%. This phenomenon can provide an additional mechanism of current increase in transistors based on heterostructures with donor–acceptor doping.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785019100286