Deterministic nanowire fanout and interconnect without any critical translational alignment

Interfacing the nanoworld with the microworld represents a critical challenge to fully integrated nanosystems. Solutions to this problem have generally required either nanoprecision alignment or stochastic assembly. A design is presented that allows complete and deterministic fanout of regular array...

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Bibliographic Details
Published inIEEE transactions on nanotechnology Vol. 5; no. 4; pp. 356 - 361
Main Authors Di Spigna, N.H., Nackashi, D.P., Amsinck, C.J., Sonkusale, S.R., Franzon, P.D.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.07.2006
Institute of Electrical and Electronics Engineers
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Alignment
Applied sciences
Arrays
Assembly
crossbar architectures
Decoding
Design. Technologies. Operation analysis. Testing
Electronics
Error analysis
Exact sciences and technology
Fabrication
Fanout
FETs
Integrated circuits
interconnect
Joining processes
Lithography
Molecular electronics, nanoelectronics
Nanocomposites
Nanolithography
Nanomaterials
nanoscale interfacing
Nanostructure
nanotechnology
Nanowires
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stochastic processes
Wire
Wires
Interconnection network
Alignment
fanout
Interconnection
Integrated circuit
Nanowires
Deterministic approach
crossbar architectures
interconnect
Nanotechnology
Nanoelectronics
nanoscale interfacing
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Summary:Interfacing the nanoworld with the microworld represents a critical challenge to fully integrated nanosystems. Solutions to this problem have generally required either nanoprecision alignment or stochastic assembly. A design is presented that allows complete and deterministic fanout of regular arrays of wires from the nano- to the microworld without the need for any critical translational alignment steps. For example, deterministically connecting 10-nm wires directly to 3-mum wires would require a translational alignment to within only about 6 mum. The design also allows for nanowire interconnect and is independent of the technology used to fabricate the nanowires, enabling technologies for which alignment remains very challenging. The impact of potential fabrication errors is analyzed and a structure is fabricated that demonstrates the feasibility of such a design
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ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2006.876926