Modeling of metal-ferroelectric-semiconductor field effect transistors

The characteristics for a MFSFET (metal-ferroelectric-semiconductor field effect transistor) is very different than a conventional MOSFET and must be modeled differently. The drain current has a hysteresis shape with respect to the gate voltage. The position along the hysteresis curve is dependent o...

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Bibliographic Details
Published inIntegrated ferroelectrics Vol. 21; no. 1-4; pp. 127 - 143
Main Authors Macleod, Todd C., Ho, Fat Duen
Format Journal Article
LanguageEnglish
Published Taylor & Francis Group 01.09.1998
Subjects
ferroelectric time decay
ferroelectric transistors
hysteresis modeling
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Summary:The characteristics for a MFSFET (metal-ferroelectric-semiconductor field effect transistor) is very different than a conventional MOSFET and must be modeled differently. The drain current has a hysteresis shape with respect to the gate voltage. The position along the hysteresis curve is dependent on the last positive or negative polling of the ferroelectric material. The drain current also has a logarithmic decay after the last polling. A model has been developed to describe the MFSFET drain current for both gate voltage on and gate voltage off conditions. This model takes into account the hysteresis nature of the MFSFET and the time dependent decay. The model is based on the shape of the Fermi-Dirac function which has been modified to describe the MFSFET's drain current. This is different from the model proposed by Chen et. al. [1] and that by Wu [2] .
ISSN:1058-4587
1607-8489
DOI:10.1080/10584589808202057