High tangential signal sensitivity GaAs planar doped barrier diodes for microwave/millimeter-wave power detector applications

Tangential signal sensitivity (TSS) of GaAs planar doped barrier (PDB) detector diodes as low as -55 dBm at 35 GHz has been achieved. In comparison with that of reported devices, this value is 6-dBm better, implying the diodes can detect much lower power hence widening the dynamic range of microwave...

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Bibliographic Details
Published inIEEE microwave and wireless components letters Vol. 15; no. 3; pp. 150 - 152
Main Authors Zhirun Hu, Vo, V.T., Rezazadeh, A.A.
Format Journal Article
LanguageEnglish
Published IEEE 01.03.2005
Subjects
Detectors
Dynamic range
Gallium arsenide
Microwave devices
planar doped barrier (PDB) diodes
Radio frequency
RF power detection
Schottky barriers
Schottky diodes
Semiconductor diodes
sensors
Shape control
tangential signal sensitivity (TSS)
Temperature
voltage sensitivity
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Summary:Tangential signal sensitivity (TSS) of GaAs planar doped barrier (PDB) detector diodes as low as -55 dBm at 35 GHz has been achieved. In comparison with that of reported devices, this value is 6-dBm better, implying the diodes can detect much lower power hence widening the dynamic range of microwave/millimeter-wave power detectors.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2005.844204