Interface Properties between Ni and p-GaN Studied by Photoemission Spectroscopy

Interface properties between p-GaN and Ni were investigated by vacuum uv photoemission spectroscopy and AFM. Residual oxide on the GaN surface was removed by Ni deposition and subsequent annealing, and the layered Ni became an island-like shape with annealing in O2 ambient. Such annealing effects re...

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Published inJapanese Journal of Applied Physics Vol. 41; no. Part 1, No. 4B; pp. 2493 - 2496
Main Authors Hagio, Yoshinori, Sugahara, Hideo, Maruyama, Takahiro, Nanishi, Yasushi, Akimoto, Katsuhiro, Miyajima, Takao, Kijima, Satoru
Format Journal Article
LanguageEnglish
Published 01.01.2002
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Summary:Interface properties between p-GaN and Ni were investigated by vacuum uv photoemission spectroscopy and AFM. Residual oxide on the GaN surface was removed by Ni deposition and subsequent annealing, and the layered Ni became an island-like shape with annealing in O2 ambient. Such annealing effects result in the direct contact of Au with atomically clean GaN in a Au/Ni/p-GaN structure. The cleaning effect of Ni and island formation of oxidized Ni may play an important role in forming an ohmic contact to p-GaN. 8 refs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.41.2493