Cubic erbium trihydride thin films
High-purity, erbium hydride thin films have been deposited onto α-Al2O3 and oxidized Si by reactive sputtering methods. Rutherford backscattering spectrometry and elastic recoil detection show that films deposited at temperatures of 35, 150 and 275°C have a composition of 3H:1Er. Erbium trihydride f...
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Published in | Thin solid films Vol. 520; no. 19; pp. 6145 - 6152 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
31.07.2012
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | High-purity, erbium hydride thin films have been deposited onto α-Al2O3 and oxidized Si by reactive sputtering methods. Rutherford backscattering spectrometry and elastic recoil detection show that films deposited at temperatures of 35, 150 and 275°C have a composition of 3H:1Er. Erbium trihydride films consist of a face-centered cubic erbium sub-lattice with a lattice parameter in the range of 5.11–5.20Å. The formation of cubic ErH3 is intriguing, because previous studies demonstrate a single trihydride phase with a hexagonal metal sub-lattice. The formation of a stable, cubic trihydride phase is attributed to a large, in-plane stress resulting from ion beam sputter deposition.
►Cubic erbium trihydride thin films produced by ion beam sputter deposition. ►Face-centered cubic metal sub-lattice verified by X-ray and electron diffraction. ►Composition evaluated using four different techniques. ►Film stress monitored during deposition. ►Formation of cubic erbium trihydride attributed to a large, in-plane film stress. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 SAND2012-0120J AC04-94AL85000 USDOE National Nuclear Security Administration (NNSA) |
ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2012.06.008 |