Cubic erbium trihydride thin films

High-purity, erbium hydride thin films have been deposited onto α-Al2O3 and oxidized Si by reactive sputtering methods. Rutherford backscattering spectrometry and elastic recoil detection show that films deposited at temperatures of 35, 150 and 275°C have a composition of 3H:1Er. Erbium trihydride f...

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Bibliographic Details
Published inThin solid films Vol. 520; no. 19; pp. 6145 - 6152
Main Authors Adams, D.P., Rodriguez, M.A., Romero, J.A., Kotula, P.G., Banks, J.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 31.07.2012
Elsevier
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Summary:High-purity, erbium hydride thin films have been deposited onto α-Al2O3 and oxidized Si by reactive sputtering methods. Rutherford backscattering spectrometry and elastic recoil detection show that films deposited at temperatures of 35, 150 and 275°C have a composition of 3H:1Er. Erbium trihydride films consist of a face-centered cubic erbium sub-lattice with a lattice parameter in the range of 5.11–5.20Å. The formation of cubic ErH3 is intriguing, because previous studies demonstrate a single trihydride phase with a hexagonal metal sub-lattice. The formation of a stable, cubic trihydride phase is attributed to a large, in-plane stress resulting from ion beam sputter deposition. ►Cubic erbium trihydride thin films produced by ion beam sputter deposition. ►Face-centered cubic metal sub-lattice verified by X-ray and electron diffraction. ►Composition evaluated using four different techniques. ►Film stress monitored during deposition. ►Formation of cubic erbium trihydride attributed to a large, in-plane film stress.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
SAND2012-0120J
AC04-94AL85000
USDOE National Nuclear Security Administration (NNSA)
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2012.06.008