Fabrication and Characterization of SnCl2- and CuBr-Added Perovskite Photovoltaic Devices

Perovskite photovoltaic devices added with tin (Sn) dichloride and copper (Cu) bromide were fabricated and characterized. The thin film devices were prepared by an ordinary spin-coating technique using an air blowing method in ambient air. A decaphenylcyclopentasilane layer was coated at the surface...

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Bibliographic Details
Published inTechnologies (Basel) Vol. 10; no. 6; p. 112
Main Authors Asakawa, Yugo, Oku, Takeo, Kido, Masashi, Suzuki, Atsushi, Okumura, Riku, Okita, Masanobu, Fukunishi, Sakiko, Tachikawa, Tomoharu, Hasegawa, Tomoya
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 28.10.2022
Subjects
Annealing
Circuits
Copper
Devices
Dichlorides
Efficiency
Electrodes
Energy gap
First principles
first-principles calculation
High temperature
Nitrogen
perovskite
Perovskites
Photovoltaic cells
polysilane
Short circuit currents
solar cell
Spin coating
Thin films
Tin
United States > US
Japan
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Summary:Perovskite photovoltaic devices added with tin (Sn) dichloride and copper (Cu) bromide were fabricated and characterized. The thin film devices were prepared by an ordinary spin-coating technique using an air blowing method in ambient air. A decaphenylcyclopentasilane layer was coated at the surface of perovskite layer and annealed at a high temperature of 190 °C. Conversion efficiencies and short-circuit current densities were improved for devices added with Sn and Cu compared with the standard devices. The energy gap of the perovskite crystal decreased through the Sn addition, which was also confirmed by first-principles calculations.
ISSN:2227-7080
2227-7080
DOI:10.3390/technologies10060112