Optical and Structural Properties of InGaN-AlGaN Ultraviolet Light-Emitting Diodes

• Published in: IEEE photonics technology letters Vol. 20; no. 23; pp. 1911 - 1913
• Main Authors: Sang-Mook Kim, Sang-Mook Kim, Jae Bum Kim, Jae Bum Kim, Junggeun Jhin, Junggeun Jhin, Jong Hyeob Baek, Jong Hyeob Baek, In Hwan Lee, In Hwan Lee, Gun Young Jung, Gun Young Jung
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.12.2008; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: AlGaN; Flat panel displays; flip-chip; Gallium nitride; Light emitting diodes; Light sources; light-emitting diodes (LEDs); Materials science and technology; Optical materials; patterned sapphire substrate (PSS); Phosphors; Photonics; Quantum wells; Silicon; silicon optical bench (SiOB); ultraviolet (UV)
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2008.2004700

We fabricated and investigated the performances of InGaN-AlGaN ultraviolet (UV) light-emitting diodes (LEDs) emitting at 380 nm. The output power of a conventional LED, a patterned sapphire substrate LED (PSS LED), and a PSS flip-chip LED (PSS FCLED) were about 0.94, 1.86, and 5.18 mW, respectively, at a forward injection current of 20 mA. These results indicate that the light output-powers of the PSS LED and PSS FCLED were enhanced as much as 97% and 451% compared to the conventional LED. Subsequent optical simulations confirm the remarkable enhancements in optical power of the PSS FCLED at UV wavelengths.