Electrical and structural characterization of PLD grown CeO2-HfO2 laminated high-k gate dielectrics

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Bibliographic Details
Published inMaterials science in semiconductor processing Vol. 9; no. 6; pp. 1061 - 1064
Main Authors KARAKAYA, K, BARCONES, B, RITTERSMA, Z. M, VAN BERKUM, J. G. M, VERHEIJEN, M. A, RIJNDERS, G, BLANK, D. H. A
Format Conference Proceeding Journal Article
LanguageEnglish
Published Oxford Elsevier Science 01.12.2006
Subjects
Applied sciences
Design. Technologies. Operation analysis. Testing
Dielectric, amorphous and glass solid devices
Electronics
Exact sciences and technology
Integrated circuits
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Amorphous material
Annealing
Stratified material
Voltage current curve
Thermal management (packaging)
Cooling rate
In situ
Polycrystal
Pulsed laser deposition
X ray diffraction
Physical properties
Thin film
Charge density
Microelectronic fabrication
Pulsed laser deposition (PLD)
Cooling system
Leakage current
High k dielectric
Electrical
Capacitor
Current density
Room temperature
Voltage capacity curve
Electrical characteristic
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ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2006.10.024