Near-infrared emission from mesoporous crystalline germanium
Mesoporous crystalline germanium was fabricated by bipolar electrochemical etching of Ge wafer in HF-based electrolyte. It yields uniform mesoporous germanium layers composed of high density of crystallites with an average size 5-7 nm. Subsequent extended chemical etching allows tuning of crystallit...
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Published in | AIP advances Vol. 4; no. 10; pp. 107128 - 107128-5 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Melville
American Institute of Physics
01.10.2014
AIP Publishing LLC |
Subjects | |
Online Access | Get full text |
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Summary: | Mesoporous crystalline germanium was fabricated by bipolar electrochemical etching of Ge wafer in HF-based electrolyte. It yields uniform mesoporous germanium layers composed of high density of crystallites with an average size 5-7 nm. Subsequent extended chemical etching allows tuning of crystallites size while preserving the same chemical composition. This highly controllable nanostructure exhibits photoluminescence emission above the bulk Ge bandgap, in the near-infrared range (1095-1360nm) with strong evidence of quantum confinement within the crystallites. |
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ISSN: | 2158-3226 2158-3226 |
DOI: | 10.1063/1.4898643 |