Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process

We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of 〈111〉 segments were formed by employing a reactant gas purging process. Unli...

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Published inNanotechnology Vol. 23; no. 11; pp. 115603 - 1-6
Main Authors Kim, Jung Hyuk, Moon, So Ra, Kim, Yong, Chen, Zhi Gang, Zou, Jin, Choi, Duk Yong, Joyce, Hannah J, Gao, Qiang, Tan, H Hoe, Jagadish, Chennupati
Format Journal Article
LanguageEnglish
Published England IOP Publishing 23.03.2012
Subjects
Nanocomposites
Nanomaterials
Nanostructure
Nanowires
Purging
Segments
Silicon substrates
Walls
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Summary:We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of 〈111〉 segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges formed between (111) side walls of V-grooved (100) silicon substrates have been demonstrated.
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ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/23/11/115603