Advantages of Blue InGaN Light-Emitting Diodes with a Mix of AlGaN and InGaN Quantum Barriers

In this study, a new design of quantum barriers has been investigated numerically with the purpose of improving the optical performance of blue InGaN light-emitting diodes (LEDs). Through analysis of energy band diagrams, carrier concentrations, carrier current densities, Auger recombination rates,...

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Bibliographic Details
Published inJournal of electronic materials Vol. 44; no. 10; pp. 3253 - 3258
Main Authors Zeng, Si-Ming, Fan, Guang-Han, Zheng, Shu-Wen
Format Journal Article
LanguageEnglish
Published New York Springer US 01.10.2015
Springer Nature B.V
Subjects
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electronics and Microelectronics
Instrumentation
Light emitting diodes
Materials Science
Optical and Electronic Materials
Quantum theory
Solid State Physics
Studies
Light-emitting diodes
AlGaN quantum barriers
efficiency droop
InGaN quantum barriers
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Summary:In this study, a new design of quantum barriers has been investigated numerically with the purpose of improving the optical performance of blue InGaN light-emitting diodes (LEDs). Through analysis of energy band diagrams, carrier concentrations, carrier current densities, Auger recombination rates, and radiative recombination rates, we obtain simulation results showing that the proposed structure with a mix of AlGaN and InGaN quantum barriers can significantly improve the light output power and internal quantum efficiency (IQE), being mainly attributed to successful enhancement of the hole injection efficiency and suppression of the electron leakage current. Moreover, the efficiency droop of the LEDs is markedly improved by using the newly designed structure.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-015-3886-2