Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

• Published in: AIP advances Vol. 4; no. 8; pp. 087141 - 087141-8
• Main Authors: Uddin, M. R., Doan, T. C., Li, J., Ziemer, K. S., Lin, J. Y., Jiang, H. X.
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 01.08.2014; AIP Publishing LLC
• Subjects: ALLOYS; Boron nitride; BORON NITRIDES; Carbon; CHEMICAL BONDS; Chemical composition; Chemical synthesis; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; Electrical resistivity; Electron mobility; Flow velocity; GRAPHITE; HALL EFFECT; MATERIALS SCIENCE; Metalorganic chemical vapor deposition; NANOSCIENCE AND NANOTECHNOLOGY; Nanostructured materials; NANOSTRUCTURES; Organic chemicals; Organic chemistry; PROPANE; SAPPHIRE; SEMICONDUCTOR MATERIALS; Substrates; Wide bandgap semiconductors; X ray photoelectron spectroscopy; X ray spectra
• ISSN: 2158-3226; 2158-3226
• DOI: 10.1063/1.4894451

The layer structured hexagonal boron nitride carbon semiconductor alloys, h-(BN)C, offer the unique abilities of bandgap engineering (from 0 for graphite to ∼6.4 eV for h-BN) and electrical conductivity control (from semi-metal for graphite to insulator for undoped h-BN) through alloying and have the potential to complement III-nitride wide bandgap semiconductors and carbon based nanostructured materials. Epilayers of (BN)-rich h-(BN)1-x(C2)x alloys were synthesized by metal-organic chemical vapor deposition (MOCVD) on (0001) sapphire substrates. Hall-effect measurements revealed that homogeneous (BN)-rich h-(BN)1-x(C2)x alloys are naturally n-type. For alloys with x = 0.032, an electron mobility of about 20 cm2/Vs at 650 °K was measured. X-ray photoelectron spectroscopy (XPS) was used to determine the chemical composition and analyze chemical bonding states. Both composition and chemical bonding analysis confirm the formation of alloys. XPS results indicate that the carbon concentration in the alloys increases almost linearly with the flow rate of the carbon precursor (propane (C3H8)) employed during the epilayer growth. XPS chemical bonding analysis showed that these MOCVD grown alloys possess more C-N bonds than C-B bonds, which possibly renders the undoped h-(BN)1-x(C2)x alloys n-type and corroborates the Hall-effect measurement results.