Inhomogeneous injection in III-nitride light emitters with deep multiple quantum wells

Excessive depth of optically active quantum wells (QWs) and related increase in QW population capacity is one of the main causes of inhomogeneous carrier injection and unequal QW populations in multiple-quantum-well III-nitride light emitters operating in the visible range. In turn, uneven distribut...

Full description

Saved in:
Bibliographic Details
Published inJournal of computational electronics Vol. 14; no. 2; pp. 432 - 443
Main Authors Kisin, Mikhail V., El-Ghoroury, Hussein S.
Format Journal Article
LanguageEnglish
Published New York Springer US 01.06.2015
Springer Nature B.V
Subjects
Carrier injection
Carrier recombination
Efficiency
Electric fields
Electrical Engineering
Emitters
Engineering
Light emitting diodes
Mathematical and Computational Engineering
Mathematical and Computational Physics
Mechanical Engineering
Multi Quantum Wells
Nitrides
Optical activity
Optical and Electronic Materials
Populations
Simulation
Theoretical
Carrier injection
Light emitting diodes
Multi-QW structures
Color-coded structures
Online AccessGet full text

Cover

More Information
Summary:Excessive depth of optically active quantum wells (QWs) and related increase in QW population capacity is one of the main causes of inhomogeneous carrier injection and unequal QW populations in multiple-quantum-well III-nitride light emitters operating in the visible range. In turn, uneven distribution of injected carriers across the device’s active region creates imbalance between confined electron and hole QW populations and supports large residual QW charges, especially in marginally located n-side and p-side QWs. QW charges are strongly non-equilibrium as determined by dynamic balance between carrier capture and recombination rates, with the later being progressively faster in excessively deep QWs.
ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-015-0673-5