Epitaxial single-crystal rare-earth oxide in horizontal slot waveguide for silicon-based integrated active photonic devices

We have epitaxially grown high-quality single-crystal rare-earth oxide thin films, including Gd O and erbium-incorporated (ErGd) O , on silicon-on-insulator substrate, and investigated their optical properties when embedded in horizontal slot waveguides. (ErGd) O with an erbium concentration in the...

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Published inOptics express Vol. 28; no. 10; pp. 14448 - 14460
Main Authors Xu, Xuejun, Fili, Viviana, Szuba, Wojciech, Hiraishi, Masaya, Inaba, Tomohiro, Tawara, Takehiko, Omi, Hiroo, Gotoh, Hideki
Format Journal Article
LanguageEnglish
Published United States 11.05.2020
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Abstract We have epitaxially grown high-quality single-crystal rare-earth oxide thin films, including Gd O and erbium-incorporated (ErGd) O , on silicon-on-insulator substrate, and investigated their optical properties when embedded in horizontal slot waveguides. (ErGd) O with an erbium concentration in the mid-10 cm range shows well-resolved Stark-split photoluminescence emission peaks in the telecommunications band and a photoluminescence lifetime-concentration product as large as 2.67×10 s·cm at room-temperature. Using these materials, horizontal slot waveguides with strong optical confinement in low-refractive-index rare-earth oxide layers, have been fabricated for silicon-based integrated active photonic devices. Thanks to the strong light-matter interaction, a large waveguide modal absorption of 88 dB/cm related to erbium ions is achieved, leading to a large potential optical gain. Intense emissions from the waveguides are also observed, with a radiation efficiency on the order of 10 . These results indicate that a combination of epitaxial rare-earth oxide thin films and horizontal slot waveguides provides a promising platform for light amplification and generation on silicon.
AbstractList We have epitaxially grown high-quality single-crystal rare-earth oxide thin films, including Gd 2 O 3 and erbium-incorporated (ErGd) 2 O 3 , on silicon-on-insulator substrate, and investigated their optical properties when embedded in horizontal slot waveguides. (ErGd) 2 O 3 with an erbium concentration in the mid-10 21 cm −3 range shows well-resolved Stark-split photoluminescence emission peaks in the telecommunications band and a photoluminescence lifetime-concentration product as large as 2.67×10 18 s·cm −3 at room-temperature. Using these materials, horizontal slot waveguides with strong optical confinement in low-refractive-index rare-earth oxide layers, have been fabricated for silicon-based integrated active photonic devices. Thanks to the strong light-matter interaction, a large waveguide modal absorption of 88 dB/cm related to erbium ions is achieved, leading to a large potential optical gain. Intense emissions from the waveguides are also observed, with a radiation efficiency on the order of 10 −4 . These results indicate that a combination of epitaxial rare-earth oxide thin films and horizontal slot waveguides provides a promising platform for light amplification and generation on silicon.
We have epitaxially grown high-quality single-crystal rare-earth oxide thin films, including Gd O and erbium-incorporated (ErGd) O , on silicon-on-insulator substrate, and investigated their optical properties when embedded in horizontal slot waveguides. (ErGd) O with an erbium concentration in the mid-10 cm range shows well-resolved Stark-split photoluminescence emission peaks in the telecommunications band and a photoluminescence lifetime-concentration product as large as 2.67×10 s·cm at room-temperature. Using these materials, horizontal slot waveguides with strong optical confinement in low-refractive-index rare-earth oxide layers, have been fabricated for silicon-based integrated active photonic devices. Thanks to the strong light-matter interaction, a large waveguide modal absorption of 88 dB/cm related to erbium ions is achieved, leading to a large potential optical gain. Intense emissions from the waveguides are also observed, with a radiation efficiency on the order of 10 . These results indicate that a combination of epitaxial rare-earth oxide thin films and horizontal slot waveguides provides a promising platform for light amplification and generation on silicon.
Author Fili, Viviana
Hiraishi, Masaya
Tawara, Takehiko
Xu, Xuejun
Inaba, Tomohiro
Gotoh, Hideki
Szuba, Wojciech
Omi, Hiroo
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Snippet We have epitaxially grown high-quality single-crystal rare-earth oxide thin films, including Gd O and erbium-incorporated (ErGd) O , on silicon-on-insulator...
We have epitaxially grown high-quality single-crystal rare-earth oxide thin films, including Gd 2 O 3 and erbium-incorporated (ErGd) 2 O 3 , on...
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Title Epitaxial single-crystal rare-earth oxide in horizontal slot waveguide for silicon-based integrated active photonic devices
URI https://www.ncbi.nlm.nih.gov/pubmed/32403485
https://search.proquest.com/docview/2403034590
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