Epitaxial single-crystal rare-earth oxide in horizontal slot waveguide for silicon-based integrated active photonic devices

• Published in: Optics express Vol. 28; no. 10; pp. 14448 - 14460
• Main Authors: Xu, Xuejun, Fili, Viviana, Szuba, Wojciech, Hiraishi, Masaya, Inaba, Tomohiro, Tawara, Takehiko, Omi, Hiroo, Gotoh, Hideki
• Format: Journal Article
• Language: English
• Published: United States 11.05.2020
• ISSN: 1094-4087; 1094-4087
• DOI: 10.1364/oe.389765

We have epitaxially grown high-quality single-crystal rare-earth oxide thin films, including Gd O and erbium-incorporated (ErGd) O , on silicon-on-insulator substrate, and investigated their optical properties when embedded in horizontal slot waveguides. (ErGd) O with an erbium concentration in the mid-10 cm range shows well-resolved Stark-split photoluminescence emission peaks in the telecommunications band and a photoluminescence lifetime-concentration product as large as 2.67×10 s·cm at room-temperature. Using these materials, horizontal slot waveguides with strong optical confinement in low-refractive-index rare-earth oxide layers, have been fabricated for silicon-based integrated active photonic devices. Thanks to the strong light-matter interaction, a large waveguide modal absorption of 88 dB/cm related to erbium ions is achieved, leading to a large potential optical gain. Intense emissions from the waveguides are also observed, with a radiation efficiency on the order of 10 . These results indicate that a combination of epitaxial rare-earth oxide thin films and horizontal slot waveguides provides a promising platform for light amplification and generation on silicon.