APA (7th ed.) Citation

Liu, W., Liou, J. J., Jiang, Y., Singh, N., Lo, G. Q., Chung, J., & Jeong, Y. H. (2010). Failure Analysis of Si Nanowire Field-Effect Transistors Subject to Electrostatic Discharge Stresses. IEEE electron device letters, 31(9), 915-917. https://doi.org/10.1109/LED.2010.2052911

Chicago Style (17th ed.) Citation

Liu, Wen, Juin J. Liou, Y. Jiang, Navab Singh, G Q. Lo, J. Chung, and Y H. Jeong. "Failure Analysis of Si Nanowire Field-Effect Transistors Subject to Electrostatic Discharge Stresses." IEEE Electron Device Letters 31, no. 9 (2010): 915-917. https://doi.org/10.1109/LED.2010.2052911.

MLA (9th ed.) Citation

Liu, Wen, et al. "Failure Analysis of Si Nanowire Field-Effect Transistors Subject to Electrostatic Discharge Stresses." IEEE Electron Device Letters, vol. 31, no. 9, 2010, pp. 915-917, https://doi.org/10.1109/LED.2010.2052911.