A Low-Power Linear SiGe BiCMOS Low-Noise Amplifier for Millimeter-Wave Active Imaging
This letter presents a low-power linear and wideband two-stage millimeter-wave low-noise amplifier (LNA) fabricated in a low-cost 0.18 ¿m SiGe BiCMOS technology. Design techniques utilized to optimize the gain and NF and to achieve high linearity and wideband at W-band are addressed. The LNA achieve...
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Published in | IEEE microwave and wireless components letters Vol. 20; no. 2; pp. 103 - 105 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.02.2010
Institute of Electrical and Electronics Engineers |
Subjects | |
Online Access | Get full text |
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Summary: | This letter presents a low-power linear and wideband two-stage millimeter-wave low-noise amplifier (LNA) fabricated in a low-cost 0.18 ¿m SiGe BiCMOS technology. Design techniques utilized to optimize the gain and NF and to achieve high linearity and wideband at W-band are addressed. The LNA achieves a peak power gain of 14.5 dB at 77 GHz with a 3 dB bandwidth of 14.5 GHz from 69 to 83.5 GHz. The measured NF is 6.9 dB at 77 GHz and is lower than 8 dB from 64 to 81 GHz. Both input and output return losses are better than 11 dB and 17 dB at 77 GHz, respectively. The measured input 1 dB compression point is -11.4 dBm at 77 GHz with low power consumption of only 37 mW. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1531-1309 1558-1764 |
DOI: | 10.1109/LMWC.2009.2038528 |