Nonequilibrium spin transport through a diluted magnetic semiconductor quantum dot system with noncollinear magnetization

• Published in: Annals of physics Vol. 330; pp. 95 - 103
• Main Authors: Ma, Minjie, Jalil, Mansoor Bin Abdul, Tan, Seng Gee
• Format: Journal Article
• Language: English
• Published: New York Elsevier Inc 01.03.2013; Elsevier BV
• Subjects: ANALYTICAL SOLUTION; APPROXIMATIONS; Charge; COUPLING; Electric potential; EQUATIONS OF MOTION; GREEN FUNCTION; MAGNETIC SEMICONDUCTORS; Magnetism; MAGNETIZATION; MAGNETORESISTANCE; Mathematical analysis; NANOSCIENCE AND NANOTECHNOLOGY; Quantum dot; QUANTUM DOTS; Quantum physics; Semiconductors; SENSORS; SPIN; SPIN ORIENTATION; Spin-dependent transport; Transport; TUNNEL EFFECT; Tunnel magnetoresistance; Tunneling; Voltage; Tunnel magnetoresistance; Quantum dot; Spin-dependent transport
• ISSN: 0003-4916; 1096-035X
• DOI: 10.1016/j.aop.2012.11.016

The spin-dependent transport through a diluted magnetic semiconductor quantum dot (QD) which is coupled via magnetic tunnel junctions to two ferromagnetic leads is studied theoretically. A noncollinear system is considered, where the QD is magnetized at an arbitrary angle with respect to the leads’ magnetization. The tunneling current is calculated in the coherent regime via the Keldysh nonequilibrium Green’s function (NEGF) formalism, incorporating the electron–electron interaction in the QD. We provide the first analytical solution for the Green’s function of the noncollinear DMS quantum dot system, solved via the equation of motion method under Hartree–Fock approximation. The transport characteristics (charge and spin currents, and tunnel magnetoresistance (TMR)) are evaluated for different voltage regimes. The interplay between spin-dependent tunneling and single-charge effects results in three distinct voltage regimes in the spin and charge current characteristics. The voltage range in which the QD is singly occupied corresponds to the maximum spin current and greatest sensitivity of the spin current to the QD magnetization orientation. The QD device also shows transport features suitable for sensor applications, i.e., a large charge current coupled with a high TMR ratio. ► The spin polarized transport through a diluted magnetic quantum dot is studied. ► The model is based on the Green’s function and the equation of motion method.► The charge and spin currents and tunnel magnetoresistance (TMR) are investigated. ► The system is suitable for current-induced spin-transfer torque application. ► A large tunneling current and a high TMR are possible for sensor application.