Nanoclustering in Silicon Induced by Oxygen Ions Implanted

We report about the nanoclustering induced by oxygen-implantation in silicon. A tandem-type accelerator, with a maximum acceleration voltage of 3 MV, equipped with a sputtering ion source suitable for the production of high current ion beams by sputtering of solid cathodes has been used. The surface...

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Bibliographic Details
Published inNanomaterials and nanotechnology Vol. 1; no. 2; p. 25
Main Authors Manno, D, Serra, A, Filippo, E, Rossi, M, Quarta, G, Maruccio, L, Calcagnile, L
Format Journal Article
LanguageEnglish
Published John Wiley & Sons, Inc 10.11.2011
Hindawi - SAGE Publishing
Subjects
Electric properties
Electrical transport
Hall effect
Methods
Nanostructures
Raman spectroscopy
Silicon
STM
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Summary:We report about the nanoclustering induced by oxygen-implantation in silicon. A tandem-type accelerator, with a maximum acceleration voltage of 3 MV, equipped with a sputtering ion source suitable for the production of high current ion beams by sputtering of solid cathodes has been used. The surface modifications and the structure of nanoclusters are investigated. The topographic images, obtained by scanning tunnelling microscope showed that the surface is covered with a dense array of tetragonal nanostructures oriented with respect to the substrate. Raman spectroscopy data allowed us to estimate an average cluster size of about 50 nm. Resistivity and Hall effect measurements evidenced that the electron transport in the implanted silicon samples is affected by the nanoclusters array and it could be explained by thermally activated hopping between localized states.
ISSN:1847-9804
1847-9804
DOI:10.5772/50957