Ultrapure arsenic and its compounds for optical and semiconductor materials
The article contains a survey of methods of deep purification of elemental arsenic and its compounds used in technology of optical, optoelectronic, and semiconductor materials. Severe requirements on permissible impurity content (ppb level) and features of structure and properties of these substance...
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Published in | Inorganic materials Vol. 52; no. 13; pp. 1339 - 1357 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Moscow
Pleiades Publishing
01.12.2016
Springer Nature B.V |
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Abstract | The article contains a survey of methods of deep purification of elemental arsenic and its compounds used in technology of optical, optoelectronic, and semiconductor materials. Severe requirements on permissible impurity content (ppb level) and features of structure and properties of these substances make the process of their production in the state of high purity unescapably multistage. The physics and chemistry and factors determining efficiency of the developed processing routes and the attained purity level for the arsenic, its oxide, chloride, hydride, and sulfides are described in this paper. |
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AbstractList | The article contains a survey of methods of deep purification of elemental arsenic and its compounds used in technology of optical, optoelectronic, and semiconductor materials. Severe requirements on permissible impurity content (ppb level) and features of structure and properties of these substances make the process of their production in the state of high purity unescapably multistage. The physics and chemistry and factors determining efficiency of the developed processing routes and the attained purity level for the arsenic, its oxide, chloride, hydride, and sulfides are described in this paper. |
Author | Fedorov, V. A. Churbanov, M. F. |
Author_xml | – sequence: 1 givenname: V. A. surname: Fedorov fullname: Fedorov, V. A. email: fedorov@igic.ras.ru organization: Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences – sequence: 2 givenname: M. F. surname: Churbanov fullname: Churbanov, M. F. organization: Devyatykh Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences |
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CitedBy_id | crossref_primary_10_1016_j_fuel_2017_10_085 crossref_primary_10_1515_revic_2021_0005 crossref_primary_10_1134_S0020168518100060 crossref_primary_10_1016_j_mineng_2019_02_022 crossref_primary_10_1134_S0020168519120045 crossref_primary_10_1021_acs_iecr_4c00376 crossref_primary_10_1134_S0020168518100059 crossref_primary_10_1007_s11771_023_5379_4 crossref_primary_10_1016_j_comptc_2020_113136 crossref_primary_10_3390_met8070542 |
Cites_doi | 10.1134/S0020168509130019 10.1023/A:1019791114256 10.1023/A:1021831017530 10.1023/A:1021878900691 10.1134/S0020168509090015 10.1134/S0020168508090094 10.1023/A:1012370808738 |
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SubjectTerms | Arsenic Arsenic compounds Chemistry Chemistry and Materials Science Chlorides Efficiency Industrial Chemistry/Chemical Engineering Inorganic Chemistry Materials Science Optoelectronics Oxides Purification Purity Semiconductor materials Sulfides |
Title | Ultrapure arsenic and its compounds for optical and semiconductor materials |
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