Ultrapure arsenic and its compounds for optical and semiconductor materials

The article contains a survey of methods of deep purification of elemental arsenic and its compounds used in technology of optical, optoelectronic, and semiconductor materials. Severe requirements on permissible impurity content (ppb level) and features of structure and properties of these substance...

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Published inInorganic materials Vol. 52; no. 13; pp. 1339 - 1357
Main Authors Fedorov, V. A., Churbanov, M. F.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.12.2016
Springer Nature B.V
Subjects
Arsenic
Arsenic compounds
Chemistry
Chemistry and Materials Science
Chlorides
Efficiency
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
Materials Science
Optoelectronics
Oxides
Purification
Purity
Semiconductor materials
Sulfides
impurity content
high-purity arsenic
compounds
deep purification
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Summary:The article contains a survey of methods of deep purification of elemental arsenic and its compounds used in technology of optical, optoelectronic, and semiconductor materials. Severe requirements on permissible impurity content (ppb level) and features of structure and properties of these substances make the process of their production in the state of high purity unescapably multistage. The physics and chemistry and factors determining efficiency of the developed processing routes and the attained purity level for the arsenic, its oxide, chloride, hydride, and sulfides are described in this paper.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168516130021