Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes

The use of ultra-wide bandgap transparent conducting beta gallium oxide (β-Ga2O3) thin films as electrodes in ferroelectric solar cells is reported. In a new material structure for energy applications, we report a solar cell structure (a light absorber sandwiched in between two electrodes - one of t...

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Published inMaterials today energy Vol. 14; p. 100350
Main Authors Pérez-Tomás, A., Chikoidze, E., Dumont, Y., Jennings, M.R., Russell, S.O., Vales-Castro, P., Catalan, G., Lira-Cantú, M., Ton –That, C., Teherani, F.H., Sandana, V.E., Bove, P., Rogers, D.J.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.12.2019
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Summary:The use of ultra-wide bandgap transparent conducting beta gallium oxide (β-Ga2O3) thin films as electrodes in ferroelectric solar cells is reported. In a new material structure for energy applications, we report a solar cell structure (a light absorber sandwiched in between two electrodes - one of them - transparent) which is not constrained by the Shockley–Queisser limit for open-circuit voltage (Voc) under typical indoor light. The solar blindness of the electrode enables a record-breaking bulk photovoltaic effect (BPE) with white light illumination (general use indoor light). This work opens up the perspective of ferroelectric photovoltaics which are not subject to the Shockley-Queisser limit by bringing into scene solar-blind conducting oxides. •Here, we use the ultra-wide bandgap semiconductor Ga2O3 for the first time in a solar cell as a transparent superstrate electrode•We show that its ultra-wide bandgap resolves a long-standing problem for ferroelectric photovoltaic devices.•The ultra-wide bandgap of Ga2O3 (~5 eV) inherently avoids the problem of undesirable photo-carrier injection that afflicts all other currently available transparent conductors.•Adoption of the solar blind transparent conductor has resulted in a record-breaking white-light-induced photoelectric field (0.7 MV/cm).
ISSN:2468-6069
2468-6069
DOI:10.1016/j.mtener.2019.100350