Transferrable single-crystal silicon nanomembranes and their application to flexible microwave systems

• Published in: Journal of Information Display Vol. 12; no. 2; pp. 109 - 113
• Main Authors: Seo, Jung-Hun, Yuan, Hao-Chih, Sun, Lei, Zhou, Weidong, Ma, Zhenqiang
• Format: Journal Article
• Language: English
• Published: Taylor & Francis 01.06.2011; 한국정보디스플레이학회
• Subjects: flexible electronics; inductors and capacitors; nanomembrane; radio frequency thin-film transistors; RF switches; 전기공학
• ISSN: 1598-0316; 2158-1606
• DOI: 10.1080/15980316.2011.568713

This paper summarizes the recent fabrication and characterizations of flexible high-speed radio frequency (RF) transistors, PIN-diode single-pole single-throw switches, as well as flexible inductors and capacitors, based on single-crystalline Si nanomembranes transferred on polyethylene terephthalate substrates. Flexible thin-film transistors (TFTs) on plastic substrates have reached RF operation speed with a record cut-off/maximum oscillation frequency (f T /f max ) values of 3.8/12 GHz. PIN diode switches exhibit excellent ON/OFF behaviors at high RF frequencies. Flexible inductors and capacitors compatible with high-speed TFT fabrication show resonance frequencies (f res ) up to 9.1 and 13.5 GHz, respectively. Robust mechanical characteristics were also demonstrated with these high-frequency passives components.