Initial stages of gallium arsenide metalorganic vapor phase epitaxy

The initial stages of the growth of GaAs epitaxial layers by metalorganic vapor phase epitaxy have been studied by atomic force microscopy. The results demonstrate that the growth mechanism depends on the pressure in the deposition chamber (atmospheric or reduced to 10 4 Pa), which can be understood...

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Published inInorganic materials Vol. 52; no. 10; pp. 985 - 989
Main Authors Boldyrevskii, P. B., Filatov, D. O., Kazantseva, I. A., Smotrin, D. S., Revin, M. V.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.10.2016
Springer Nature B.V
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Summary:The initial stages of the growth of GaAs epitaxial layers by metalorganic vapor phase epitaxy have been studied by atomic force microscopy. The results demonstrate that the growth mechanism depends on the pressure in the deposition chamber (atmospheric or reduced to 10 4 Pa), which can be understood in terms of changes in the adsorption–desorption processes on the growth surface with the participation of hydrogen.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168516100046