Initial stages of gallium arsenide metalorganic vapor phase epitaxy
The initial stages of the growth of GaAs epitaxial layers by metalorganic vapor phase epitaxy have been studied by atomic force microscopy. The results demonstrate that the growth mechanism depends on the pressure in the deposition chamber (atmospheric or reduced to 10 4 Pa), which can be understood...
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Published in | Inorganic materials Vol. 52; no. 10; pp. 985 - 989 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Moscow
Pleiades Publishing
01.10.2016
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | The initial stages of the growth of GaAs epitaxial layers by metalorganic vapor phase epitaxy have been studied by atomic force microscopy. The results demonstrate that the growth mechanism depends on the pressure in the deposition chamber (atmospheric or reduced to 10
4
Pa), which can be understood in terms of changes in the adsorption–desorption processes on the growth surface with the participation of hydrogen. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0020-1685 1608-3172 |
DOI: | 10.1134/S0020168516100046 |