A Study of Electric-Field Breakdown in E-Plane Lines at Centimeter and Millimeter Wavelengths

• Published in: IEEE transactions on microwave theory and techniques Vol. 35; no. 5; pp. 502 - 509
• Main Authors: Ney, M.M., Valluri, S.R., Yue, W., Costache, G.I., Hoefer, W.J.R.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.05.1987; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Circuit properties; Dielectric breakdown; Dielectric losses; Dielectric substrates; Electric breakdown; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Frequency; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; Millimeter wave technology; Nonuniform electric fields; Power engineering computing; Solid state circuits; Temperature; Millimetric wave; Centimetric wave; Fin line; Microwave line; Electric breakdown; Admissible maximum power
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/TMTT.1987.1133690

The microwave field breakdown in various E-plane transmission lines is investigated theoretically in the frequency range from 1 to 140 GHz. The influence of frequency, pressure, temperature, and inhomogeneity of the applied field on the breakdowm field value is discussed. The peak power-handling capability of unilateral and bilateral finlines is determined theoretically using a quasi-static evaluation of the field distribution. It is found that finlines, even with small gap widths, can handle pulse power levels well above the capability of present solid-state devices. Preliminary breakdown measurements in X-band have confirmed the validity of the theoretical predictions.