Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy
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Published in | Chinese physics B Vol. 17; no. 4; pp. 1360 - 1363 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
IOP Publishing
01.04.2008
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Online Access | Get full text |
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ISSN: | 1674-1056 2058-3834 |
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DOI: | 10.1088/1674-1056/17/4/034 |