Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy

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Bibliographic Details
Published inChinese physics B Vol. 17; no. 4; pp. 1360 - 1363
Main Authors Xin-Hua, Li, Fei, Zhong, Kai, Qiu, Zhi-Jun, Yin, Chang-Jian, Ji
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.04.2008
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ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/17/4/034