Spatial correlation effects of charged impurities on electron mobility in δ-doped quantum barriers

• Published in: Superlattices and microstructures Vol. 21; no. 2; pp. 237 - 240
• Main Authors: Koenraad, P.M., Shi, J.M., van de Stadt, A.F.W., Smets, A., Wolter, J.H., Peeters, F.M., Devreese, J.T., Perenboom, J.A.A.J.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01.01.1997; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; DX centers; Electrical properties of specific thin films; electron mobility; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Iii-v semiconductors; low dimensions; Low-field transport and mobility; piezoresistance; Physics; low dimensions; electron mobility; DX centers; Aluminium arsenides; Gallium arsenides; Inorganic compounds; Semiconductor materials; Impurities; Ternary compounds; Spatial correlation; Quantum wells; Theoretical study; Binary compounds; Planar doping; Carrier mobility
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1006/spmi.1996.0188

The quantum mobility has been measured in δ-doped GaAs/AlxGa1−xAs/GaAs structures in which one is able to vary the population of DX states. The experiments show that spatial correlations in the charge distribution enhance the quantum mobility. We are able to correctly account for these correlation effects in the mobility calculations.