Lateral-size control of trench-buried quantum wires using GaAs/AlAs superlattice layers

We demonstrated the lateral-size control of GaAs/AlAs trench-buried quantum wires (QWRs) in the region below 20 nm by using GaAs/AlAs superlattice layers (SLs). Scanning electron microscopy images and photoluminescence properties of the trench-buried QWRs revealed that the trench width can be contro...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 34; no. 8B; pp. 4405 - 4407
Main Authors SOGAWA, T, ANDO, S, KANBE, H
Format Conference Proceeding Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 1995
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Iii-v semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Aluminium arsenides
Quantum wires
Gallium arsenides
Inorganic compounds
Semiconductor materials
Photoluminescence
Binary compounds
Buried heterostructures
Experimental study
Spectral line shift
Line broadening
Preparation
Superlattices
Size effect
SEM
Energy-level splitting
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Summary:We demonstrated the lateral-size control of GaAs/AlAs trench-buried quantum wires (QWRs) in the region below 20 nm by using GaAs/AlAs superlattice layers (SLs). Scanning electron microscopy images and photoluminescence properties of the trench-buried QWRs revealed that the trench width can be controlled by varying the number of SLs and reduced to about 13 nm by growing 7 pairs of SLs. The GaAs wires in the trenches have a tendency to grow so as to maintain a constant cross-sectional area, which leads to reduction of the energetic broadening of the quantum sub-levels caused by pattern size fluctuation.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.34.4405