Structural origin of surface transformations in arsenic sulfide thin films upon UV-irradiation

[Display omitted] Photostructural transformations within AsxS100-x (x=30, 33, 35, 40) thin films upon exposure to LED light of different wavelengths, in both air and argon environments have been studied by high resolution XPS, Raman spectroscopy and LEIS methods. These complementary results show tha...

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Published inApplied surface science Vol. 394; pp. 604 - 612
Main Authors Kovalskiy, Andriy, Vlcek, Miroslav, Palka, Karel, Buzek, Jan, York-Winegar, James, Oelgoetz, Justin, Golovchak, Roman, Shpotyuk, Oleh, Jain, Himanshu
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.02.2017
Subjects
Arsenic
Oxides
Photopolymerization
Raman spectroscopy
Sulfides
Thin films
Transformations
Wavelengths
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Summary:[Display omitted] Photostructural transformations within AsxS100-x (x=30, 33, 35, 40) thin films upon exposure to LED light of different wavelengths, in both air and argon environments have been studied by high resolution XPS, Raman spectroscopy and LEIS methods. These complementary results show that light of energies close to the band gap does not modify chemical composition of the surface, but induces simple photopolymerization reactions. Superbandgap UV light, however, significantly increases S/As ratio on the surface due to formation of S-rich layer under both environmental conditions. It is proposed that photovaporization of both oxide and non-oxide cage-like molecules is responsible for the observed effect.
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ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2016.10.002