Improvement of the stability of hydrogenated amorphous silicon by hydrogen plasma treatment

The effect of post-deposition treatment by a hydrogen plasma on the structural properties, electrical properties and in particular, the stability under sunlight illumination, of device-quality intrinsic hydrogenated amorphous silicon films is described. Comparison is made with samples annealed in hy...

Full description

Saved in:
Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 33; no. 9A; pp. 4829 - 4832
Main Authors NEVIN, W. A, YAMAGISHI, H, TAWADA, Y
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 1994
Subjects
Amorphous semiconductors; glasses
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
Photoconduction and photovoltaic effects
Photoconduction and photovoltaic effects; photodielectric effects
Physics
Thin films
Time dependence
Plasma
Annealing
Stability
Hydrogen bonds
Hydrogen additions
Illumination
Silicon
Amorphous state
Experimental study
Photoconductivity
Online AccessGet full text

Cover

More Information
Summary:The effect of post-deposition treatment by a hydrogen plasma on the structural properties, electrical properties and in particular, the stability under sunlight illumination, of device-quality intrinsic hydrogenated amorphous silicon films is described. Comparison is made with samples annealed in hydrogen gas under similar conditions. Reduction of the light-induced degradation is observed after plasma treatment, by an amount depending on the treatment temperature, plasma rf power and treatment time.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.33.4829