Manipulating high-temperature superconductivity by oxygen doping in Bi2Sr2CaCu2O8+δ thin flakes

• Published in: National Science Review Vol. 9; no. 10; p. nwac089
• Main Authors: Lei, Bin, Ma, Donghui, Liu, Shihao, Sun, Zeliang, Shi, Mengzhu, Zhuo, Weizhuang, Yu, Fanghang, Gu, Genda, Wang, Zhenyu, Chen, Xianhui
• Format: Journal Article
• Language: English
• Published: China Oxford University Press 17.11.2022
• Subjects: all-solid-state field effect transistor; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; electric field effect; high-temperature superconductivity; oxygen doping; superconductor-insulator transition
• ISSN: 2095-5138; 2053-714X; 2053-714X
• DOI: 10.1093/nsr/nwac089

Abstract Harnessing the fascinating properties of correlated oxides requires precise control of their carrier density. Compared to other methods, oxygen doping provides an effective and more direct way to tune the electronic properties of correlated oxides. Although several approaches, such as thermal annealing and oxygen migration, have been introduced to change the oxygen content, a continuous and reversible solution that can be integrated with modern electronic technology is much in demand. Here, we report a novel ionic field-effect transistor using solid Gd-doped CeO2 as the gate dielectric, which shows a remarkable carrier-density-tuning ability via electric-field-controlled oxygen concentration at room temperature. In Bi2Sr2CaCu2O8+δ (Bi-2212) thin flakes, we achieve a reversible superconductor–insulator transition by driving oxygen ions in and out of the samples with electric fields, and map out the phase diagram all the way from the insulating regime to the over-doped superconducting regime by continuously changing the oxygen doping level. Scaling analysis indicates that the reversible superconductor–insulator transition for the Bi-2212 thin flakes follows the theoretical description of a two-dimensional quantum phase transition. Our work provides a route for realizing electric-field control of phase transition in correlated oxides. Moreover, the configuration of this type of transistor makes heterostructure/interface engineering possible, thus having the potential to serve as the next-generation all-solid-state field-effect transistor.