Superbroadband near-IR nano-optical source based on bismuth-doped high-silica nanocrystalline zeolites

We have shown that efficient superbroadband near-IR luminescence can be realized in bismuth-doped high-silica nanocrystalline zeolites. The emission band covered the range of 930-1620 nm, with a maximum peak at 1146.3 nm, an FWHM of 152 nm, and a lifetime of over 300 mus under the excitation of a 48...

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Published inOptics letters Vol. 34; no. 8; p. 1219
Main Authors Sun, Hong-Tao, Miwa, Yuji, Shimaoka, Fumiaki, Fujii, Minoru, Hosokawa, Akinobu, Mizuhata, Minoru, Hayashi, Shinji, Deki, Shigehito
Format Journal Article
LanguageEnglish
Published United States 15.04.2009
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Summary:We have shown that efficient superbroadband near-IR luminescence can be realized in bismuth-doped high-silica nanocrystalline zeolites. The emission band covered the range of 930-1620 nm, with a maximum peak at 1146.3 nm, an FWHM of 152 nm, and a lifetime of over 300 mus under the excitation of a 488 nm laser line. The observed luminescence was attributed to subvalent Bi (Bi(+)) ions formed in the annealed zeolites. These Bi-doped nanozeolites may find applications as superbroadband near-IR nano-optical sources.
ISSN:0146-9592
DOI:10.1364/ol.34.001219