Thermoelectric Properties of Zintl Arsenide EuCuAs

We demonstrate thermoelectric transport properties of Zintl arsenide EuCuAs. The crystal structure of EuCuAs (hexagonal P 63/ mmc space group) consists of a covalently-bonded honeycomb-type [CuAs] network sandwiched by nearly divalent Eu ions. Undoped EuCuAs exhibit the thermoelectric power factor o...

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Bibliographic Details
Published inJournal of electronic materials Vol. 52; no. 5; pp. 3121 - 3131
Main Authors Nakamura, Naoto, Goto, Yosuke, Nakahira, Yuki, Miura, Akira, Moriyoshi, Chikako, Lee, Chul-Ho, Usui, Hidetomo, Mizuguchi, Yoshikazu
Format Journal Article
LanguageEnglish
Published New York Springer US 01.05.2023
Springer Nature B.V
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Summary:We demonstrate thermoelectric transport properties of Zintl arsenide EuCuAs. The crystal structure of EuCuAs (hexagonal P 63/ mmc space group) consists of a covalently-bonded honeycomb-type [CuAs] network sandwiched by nearly divalent Eu ions. Undoped EuCuAs exhibit the thermoelectric power factor of 1.2 and 0.4 mW/mK 2 at 673 K along directions perpendicular and parallel to the uniaxial hot-pressing direction, respectively. Despite the relatively high power factor, the dimensionless figure-of-merit is limited to 0.1 at 673 K due to the high lattice thermal conductivity, > 2.0 W/mK. In addition to the relatively high power factor, first-principles calculations predicted that, owing to a peculiar shape of the Fermi surface, heavy hole-doped EuCuAs with a hole concentration of > 1.5 × 10 21  cm –3 will exhibit axis-dependent conduction polarity, which enables us to construct transverse thermoelectric devices. We investigated the synthesis and thermoelectric transport properties of Eu 1– x Na x CuAs using sodium (Na) as a hole dopant, resulting in a hole concentration of 1.0 × 10 21  cm –3 . The absolute value of the Seebeck coefficient was decreased by Na-doping, as predicted by first-principles calculations, but no conduction polarity switching was observed. This may have resulted from an insufficient hole concentration and/or preferred orientation of the samples.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-023-10290-4