Effect of Lu doping on the structure, electrical properties and energy storage performance of AgNbO3 antiferroelectric ceramics

• Published in: Journal of materials science. Materials in electronics Vol. 31; no. 10; pp. 7731 - 7741
• Main Authors: Mao, Shuaifei, Luo, Nengneng, Han, Kai, Feng, Qin, Chen, Xiyong, Peng, Biaolin, Liu, Laijun, Hu, Changzheng, Zhou, Huanfu, Toyohisa, Fujita, Wei, Yuezhou
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.05.2020; Springer Nature B.V
• Subjects: Antiferroelectricity; Ceramics; Characterization and Evaluation of Materials; Chemistry and Materials Science; Crystal structure; Density; Electric fields; Electrical properties; Energy storage; Investigations; Laboratories; Lead free; Lutetium oxide; Materials Science; Optical and Electronic Materials; Solid solutions
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-020-03309-7

Recently, AgNbO 3 antiferroelectric ceramics have attracted great attention by virtue of their characters of high energy storage density and environmental friendliness. To further optimize the electrical properties, in this work, Lu 2 O 3 modified AgNbO 3 ceramics were prepared via conventional solid state method. Crystal structure and element analysis indicated the Lu 3+ ion preferred to enter the A-site when Lu 2 O 3 content was lower than 2 mol%, otherwise, it was more likely to form LuNbO 4 or Lu 3 NbO 7 -based solid solutions. Remarkably improved stability of antiferroelectric phase was observed once Lu 3+ ions enter into the A-site, on account of the decrease of cell volume and tolerance factor. As a consequence, an enhanced recoverable energy storage density ( W rec ) of 3.5 J/cm 3 was achieved in 1 mol% Lu 2 O 3 modified AgNbO 3 ceramics at 210 kV/cm, which is superior to the other lead-free ceramics under moderate electric field (< 220 kV/cm). It is believed our study will provide a good reference for the development of AgNbO 3 -based dielectric capacitors.