Laser-diode-quality InP/Si grown by hydride vapor phase epitaxy

The heteroepitaxial growth of InP/GaAs/Si by hydride vapor phase epitaxy achieves laser diode (LD) device quality. Etch-pit density (EPD) measurements and transmission electron microscopy reveal two kinds of defects, threading dislocations and stacking faults, in the InP layer. Lowering the growth t...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 34; no. 6A; pp. L657 - L659
Main Authors TACHIKAWA, M, YAMADA, T, SASAKI, T, MORI, H, KADOTA, Y
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.06.1995
Subjects
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Stacking faults
Gallium arsenides
Inorganic compounds
Epitaxial layers
Semiconductor materials
Binary compounds
Hydrides
VPE
Experimental study
Laser diodes
Precursor
Dislocations
Thin films
Nonmetals
Etch pits
Indium phosphides
Heterojunctions
Silicon
TEM
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Summary:The heteroepitaxial growth of InP/GaAs/Si by hydride vapor phase epitaxy achieves laser diode (LD) device quality. Etch-pit density (EPD) measurements and transmission electron microscopy reveal two kinds of defects, threading dislocations and stacking faults, in the InP layer. Lowering the growth temperature of the direct InP layer on GaAs/Si reduces stacking fault density to the order of 10 4 cm -2 . Room-temperature continuous-wave operation of an InGaAsP 1.5-µ m-wavelength LD fabricated on InP/GaAs/Si confirms its crystal quality.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.34.L657