New surface-imaging process for electron beam lithography using highly oriented polydimethylsilane film

The possibilities of highly oriented polydimethylsilane film for use in electron beam lithography are shown in the present work. By electron beam irradiation onto the film, submicron patterns are obtained after the etching process. The effects of electron beam irradiation on the chemical bonds in th...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 34; no. 2A; pp. L195 - L198
Main Authors TAKEUCHI, K.-I, FURUKAWA, S
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 1995
Subjects
Application fields
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Polymer industry, paints, wood
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Technology of polymers
Ternary compound
Electroreceptor
Scanning electron microscopy
Electron beam lithography
Polysilane
Experimental study
X ray diffraction
Transmittance
Fourier spectrometry
Absorption spectrum
Microelectronic fabrication
Oriented polymer
Manufacturing process
Resist
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Summary:The possibilities of highly oriented polydimethylsilane film for use in electron beam lithography are shown in the present work. By electron beam irradiation onto the film, submicron patterns are obtained after the etching process. The effects of electron beam irradiation on the chemical bonds in the film are also studied using Fourier transform infrared absorption spectroscopy. The oriented character and the high density of the film are advantageous to the resolution, and the irradiated area shows excellent resistance to acid through the formation of the C-O-C, Si-O-C, and/or Si-O-Si bonds.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.34.L195