Ion sputter-deposition and in-air crystallisation of Cr2AlC films

Ternary alloys of composition close to Cr2AlC have been deposited by ion beam sputtering onto unheated and heated to 380 °C Si substrates. As-deposited films are amorphous. Annealing of the film in vacuum at 700 °C leads to crystallisation with 39.2 nm crystallites. Crystallisation also can be achie...

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Bibliographic Details
Published inVacuum Vol. 100; pp. 61 - 65
Main Authors Vishnyakov, V., Crisan, O., Dobrosz, P., Colligon, J.S.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.02.2014
Subjects
Annealing
Crystallisation
Crystallites
Crystallization
Deposition
Film thickness
Ion sputtering
Lattices
Oxides
Raman spectroscopy
Silicon substrates
Ternary carbides
WDX analysis
XRD analysis
XRD analysis
Annealing
Crystallisation
Ternary carbides
WDX analysis
Raman spectroscopy
Ion sputtering
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Summary:Ternary alloys of composition close to Cr2AlC have been deposited by ion beam sputtering onto unheated and heated to 380 °C Si substrates. As-deposited films are amorphous. Annealing of the film in vacuum at 700 °C leads to crystallisation with 39.2 nm crystallites. Crystallisation also can be achieved by annealing in air but there is also partial oxidation of the film surface to the depth of approximately 120 nm, which represents an oxide layer less than 5% of the total film thickness. There is an increase of lattice size along the c-axis during crystallisation in air, which indicates a small incorporation of oxygen. Film structure and crystallisation have also been analysed by Raman spectroscopy. Changes in Raman spectra in Cr2AlC have been correlated with the film crystallisation and it was observed that MAX-phase related peaks become clearly defined for the crystallised film.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2013.07.045