Impact of radio frequency power on the optoelectronic properties of ZnO films

• Published in: Optical and quantum electronics Vol. 54; no. 9
• Main Authors: Kumar, Rashmi Ranjan, Shukla, Raghvendra, Pandey, Saurabh Kumar
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.09.2022; Springer Nature B.V
• Subjects: Blue shift; Carrier density; Characterization and Evaluation of Materials; Computer Communication Networks; Deposition; Electrical Engineering; Grain size; Lasers; Optical Devices; Optical properties; Optics; Optoelectronics; Photonics; Physics; Physics and Astronomy; Process parameters; Radio frequency; Thin films; Zinc oxide; Thin films; Radio frequency; ZnO; Sputtering
• ISSN: 0306-8919; 1572-817X
• DOI: 10.1007/s11082-022-03983-3

This article presents the impact of different radio frequency (RF) power during deposition on the ZnO thin films properties, deposited using RF sputtering deposition technique. The effect of these process parameters on the structural, morphological, electrical and optical properties are elaborated in detail. The crystalline quality and optical parameters of the films are affected by RF power variation during film deposition. The film’s crystal quality was reasonably decent with the RF power reaching 100 W. For a 5 µm × 5 µm scan area, the RMS roughness value changed from 1.29 to 3.22 nm as the P RF increases from 50 to 100 W. FESEM images depicts the decrement in grain size of ZnO thin film as RF power increases. When the RF power was varied during deposition, both mobility and carrier concentrations changed. Blue shift was observed in UV emission with increasing RF power.