Effect of free-carrier absorption on performance of 808 nm AlGaAs-based high-power laser diodes

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Bibliographic Details
Published inSemiconductor science and technology Vol. 22; no. 5; pp. 502 - 510
Main Authors Bulashevich, K A, Mymrin, V F, Karpov, S Yu, Demidov, D M, Ter-Martirosyan, A L
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.05.2007
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/22/5/008