Hopping and Ionic Conduction in Tin Oxide-Based Thick-Film Resistor Compositions
Conduction mechanisms in tin oxide‐based thick‐film resistors have been investigated using impedance spectroscopic measurements. The sheet resistance, obtained by analyzing these impedance spectra, exhibits two regions of temperature dependence. The behavior in region I (room temperature to } 200°C)...
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Published in | Journal of the American Ceramic Society Vol. 80; no. 5; pp. 1198 - 1202 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Westerville, Ohio
American Ceramics Society
01.05.1997
Blackwell |
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Abstract | Conduction mechanisms in tin oxide‐based thick‐film resistors have been investigated using impedance spectroscopic measurements. The sheet resistance, obtained by analyzing these impedance spectra, exhibits two regions of temperature dependence. The behavior in region I (room temperature to } 200°C) can be explained satisfactorily in terms of variable‐range hopping conduction and in region II (200° to }350C) by a diffusion model. It is assumed that ionic tin dissolved in glass serves as the hopping sites in region I. At higher temperatures, these tin ions may participate in an ion‐exchange‐type diffusion that results in region II behavior. |
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AbstractList | Conduction mechanisms in tin oxide‐based thick‐film resistors have been investigated using impedance spectroscopic measurements. The sheet resistance, obtained by analyzing these impedance spectra, exhibits two regions of temperature dependence. The behavior in region I (room temperature to } 200°C) can be explained satisfactorily in terms of variable‐range hopping conduction and in region II (200° to }350C) by a diffusion model. It is assumed that ionic tin dissolved in glass serves as the hopping sites in region I. At higher temperatures, these tin ions may participate in an ion‐exchange‐type diffusion that results in region II behavior. |
Author | Rahman, K. M. Anisur Schneider, Susan C. Seitz, Martin A. |
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Cites_doi | 10.1080/00018738700101971 10.1016/0022-3093(80)90195-7 10.1007/BF00551732 10.1080/14786437008221061 10.1103/PhysRevB.9.2623 10.1080/14786437708232978 10.1016/0022-3093(80)90096-4 10.1103/PhysRevB.11.738 10.1080/14786437708238517 10.1007/978-3-662-02403-4 |
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Keywords | Ionic conduction Thick film resistor Electrical properties Tin oxide Sheet resistance Tin ion Temperature effect Resistor Electrical impedance |
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Notes | istex:CA71DF80D83C8F3307C2E39A405176891118FF8A ark:/67375/WNG-RBPGNCBX-S ArticleID:JACE1198 T. O. Mason—contributing editor Based in part on the thesis submitted by K. M. Anisur Rahman for the Ph.D. degree in Electrical and Computer Engineering, Marquette University, Milwaukee, WI, 1994. Member, American Ceramic Society. Presented in part at the 97th Annual Meeting of the American Ceramic Society, Cincinnati, OH, May 1, 1995 (Electronics and Glass Division, Paper No. SXXII–5–95). |
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Snippet | Conduction mechanisms in tin oxide‐based thick‐film resistors have been investigated using impedance spectroscopic measurements. The sheet resistance, obtained... |
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SubjectTerms | Applied sciences Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology |
Title | Hopping and Ionic Conduction in Tin Oxide-Based Thick-Film Resistor Compositions |
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